| 聚酰亚胺衬底CIGS薄膜附着性的改善 |
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| 引用本文： | 姜伟龙.聚酰亚胺衬底CIGS薄膜附着性的改善[J].光电子．激光,2010(11):1657-1659. |
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| 作者姓名： | 姜伟龙 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室; |
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| 基金项目： | 天津市科技创新专项资金资助项目(06FZZDGX01200); 天津市重点科技攻关专项资助项目(05YFGZGX03400); 高等学校博士学科点专项科研基金资助项目(200800551008); 国家自然科学基金资助项目(60906033) |
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| 摘 要： | 为改善聚酰亚胺(PI)衬底Cu(In,Ga)Se2(CIGS)薄膜的附着性,提出在NaF沉积前预先在Mo层上蒸发沉积100nm厚的In-Ga-Se(IGS)薄膜的新掺Na工艺。结果表明:这种IGS-NaF-CIGS式新工艺可显著改善CIGS薄膜的附着,而且CIGS薄膜材料和器件特性没有显著退化;新工艺促进了NaInSe2的生成,减少了In-Se二元相的残余,但也造成薄膜电阻率的升高和电池填充因子的下降,进而导致制备的PI衬底CIGS电池的转换效率由9.8%降至9.0%。综合考虑附着性的改善和器件效率的轻微下降,新工艺利大于弊,有很好的应用前景。
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| 关 键 词： | Cu(In Ga)Se2(CIGS) 聚酰亚胺(PI) Na掺入 附着性 |
Improved adhesion of CIGS thin film on polyimide substrate |
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| JIANG Wei-long.Improved adhesion of CIGS thin film on polyimide substrate[J].Journal of Optoelectronics·laser,2010(11):1657-1659. |
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| Authors: | JIANG Wei-long |
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| Affiliation: | JIANG Wei-long,HE Qing,LIU Wei,YU Tao,LIU Fang-fang,PANG Jin-bo,LI Feng-yan,LI Chang-jian,SUN Yun(Tianjin Key Laboratory for Photoelectronic Thin Film Devices , Technology,Institute of Photoelectronic Thin Film Device , Technology,Nankai University,Tianjin 300071,China) |
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| Abstract: | A In-Ga-Se film with thickness of 100 nm is evaporated onto Mo layer prior to NaF deposition to improve the adhesion of Cu(In,Ga)Se2(CIGS) thin film on polyimide(PI) substrates.Compared with the traditional NaF precursor process, CIGS thin films on PI have superior adhesion, displaying less delamination by the new Na-incorporation process with the IGS-NaF-CIGS sequence, and have no significant degeneration in material and device properties.NaInSe2 is found in CIGS films and hence the In-Se vestige is reduce... |
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| Keywords: | Cu(In Ga)Se2(CIGS) polyimide(PI) Na incorporation adhesion |
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