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Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors |
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| Authors: | Bouadma N Riou J Kampfer A |
| Affiliation: | Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, Paris, France; |
| Abstract: | We report the use of the ion-beam etching (IBE) technique to produce GaAs/GaAlAs BH lasers with one etched and one cleaved mirror facet. Low threshold currents of 12 mA have been measured in devices with 100 ?m-long cavities. |
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