Fabrication of p-i-n photodiodes on LPE-grown substrates

Epitaxial growth of a thick heavily doped silicon layer on a highly resistive silicon wafer by the yo-yo solute feeding method and its application to p-i-n photodiodes are discussed. An abrupt transition of the impurity profile is obtained between the n⁺ layer (1.95×10¹⁹ cm^-3, 450 μm) and the n^- layer (7.0×10¹¹ cm^-3, 80 μm). It is possible to use the thick intrinsic layers as the active region of power devices