GaInAs pin photodiode/GaAs preamplifier photoreceiver forgigabit-rate communications systems using flip-chip bonding techniques |
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| Authors: | Makiuchi M. Hamaguchi H. Kumai T. Aoki O. Oikawi Y. Wada O. |
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| Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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| Abstract: | Reports on an integrated photoreceiver using a flip-chip bonding technique. The integrated photoreceiver consists of a back-illuminated GaInAs/InP pin photodiode with a small junction area and a GaAs high-impedance preamplifier having a two-stage amplifier. The quantum efficiency and the cut-off frequency of the pin photodiode were 81% and 19GHz. This photoreceiver exhibited good practical performance characteristics, including a minimum detectable power of -29.8 dBm at 1 Gbit/s, and -26.9 dBm at 2 Gbit/s |
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