肖特基器件用重掺As衬底上外延层过渡区控制

掺As衬底外延片很大部分用于肖特基器件,器件对正向压降要求越来越高,因此对外延层参数之一的过渡区宽度提出了更高要求.讨论了影响过渡区的温度、生长速率、本征CAP层以及赶气等因素.通过一系列实验,找到了合理的生长条件,得到了完美的过渡区,解决了器件反向电压和正向压降之间的矛盾.在反向电压一致的条件下,正向压降平均降低了200 mV,产品整体成品率提高了两个百分点以上.研究结果已成功应用于大规模生产中.

Control of Epitaxial Layer Transition Region on Heavy As-Doped Substrate for Schottky Devices

As-doped substrate epitaxial wafers are largely used for Schottky devices,forward voltage are demanded with higher level increasingly.Higher requirement of the transition width which was one of the epitaxial wafer parameters was put forward.The impact factors on the transition were discussed such as temperature profile,growth rate,intrinsic CAP layer,and purge time.Reasonable growing conditions were found through a series of experiments,the perfect transition was got,the conflict between the reverse voltage...