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X波段变容管调谐GaAs FET集成VCO的设计
引用本文:袁克勤. X波段变容管调谐GaAs FET集成VCO的设计[J]. 固体电子学研究与进展, 1981, 0(2)
作者姓名:袁克勤
摘    要:本文介绍了一种宽带FET VCO的S参数设计理论和方法.根据这一理论和方法,用我所的低噪声小功率FET和电调变容管,研制成了X波段变容营调谐的GaAs FBT混合集成VCO.在8GHz频段内,获得500MHz的电调范围,在整个电调范围内,输出功率大于10mW,功率起伏小于0.5dB,直流转换效率大于10%,噪声性能与普通速调管相当,而且体积小,重量轻,成本低.


Design of an X-Band Microstrip GaAs FET VCO with Varactor-Tuning
Abstract:This paper describes the theory and the method of a broadband GaAs FET VCO designed by S-paramater. With these in mind, a X-band microstrip GaAs FET oscillator with varactor-tuning has been developed using the low noise GaAs FET and the electrical-tuning varactor of our institute. The oscillator provides an output power greater than 10mW at 8GHz with a tuning range of 500MHz, output power variation less than 0.5dB, efficiency greater than 10%, and noise performance comprable to the usual klystron; besides it features small size, lightweight, and low cost.
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