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MEMS多层膜残余应力全场光学在线测试
引用本文:聂萌,黄庆安,李伟华.MEMS多层膜残余应力全场光学在线测试[J].半导体学报,2005,26(5):1028-1032.
作者姓名:聂萌  黄庆安  李伟华
作者单位:东南大学MEMS教育部重点实验室,南京,210096;东南大学MEMS教育部重点实验室,南京,210096;东南大学MEMS教育部重点实验室,南京,210096
摘    要:提出了一种基于背面腐蚀的多层膜残余应力测试方法.此法可以简化测量过程,仅需要依次腐蚀基片背面的各层薄膜,用激光全场测量法测出相应的曲率半径,而无须腐蚀基片正面有用层,就可以提取各层薄膜的残余应力.模拟及实验证明,这是一种精度较高而且简单易行的薄膜残余应力在线提取方法.

关 键 词:残余应力  多层膜  曲率半径
文章编号:0253-4177(2005)05-1028-05
修稿时间:2004年5月30日

An In-Situ Extracting Method for Residual Stresses of a Multilayer Film by Full-Field Optical Measurement
Nie Meng,Huang Qingan,Li Weihua.An In-Situ Extracting Method for Residual Stresses of a Multilayer Film by Full-Field Optical Measurement[J].Chinese Journal of Semiconductors,2005,26(5):1028-1032.
Authors:Nie Meng  Huang Qingan  Li Weihua
Abstract:A novel in-situ extracting method for residual s tresses of a multilayer film based on back etching is proposed,in which only back films of the substrate need to be etched in turn and corresponding curvature radii needs to be measured.Then residual stress of each film layer can be obtained.It is verified by simulation and experiment that the novel method is a simple and accurate in-situ extracting method for residual stresses of the multilayer film with no destruction to front films.
Keywords:residual stress  multilayer film  curvature radius
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