| 沉积功率和气压对低频氮化硅薄膜应力的影响 |
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| 引用本文： | 韩小林,黎威志,袁凯,蒋亚东.沉积功率和气压对低频氮化硅薄膜应力的影响[J].电子器件,2010,33(2):139-141. |
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| 作者姓名： | 韩小林 黎威志 袁凯 蒋亚东 |
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| 作者单位： | 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 利用等离子体增强化学气相沉积(PECVD)工艺,在不同射频功率,不同反应气压条件下制备了氮化硅薄膜。研究了低频工艺中氮化硅薄膜的沉积速率、应力以及厚度均匀性与其二者的关系。结果表明,射频功率的改变直接影响到离子对衬底的轰击效应,而反应气压的改变影响气体分子的平均自由程。离子轰击效应和分子平均自由程对氮化硅薄膜的生长过程产生影响,从而影响沉积速率、应力以及厚度均匀性等基本性质。
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| 关 键 词： | 低频PECVD 氮化硅 应力 薄膜生长 |
Analysis of Low Frequency SiN Film on the Effect of Stress Level and Deposition Parameters |
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| HAN Xiaolin,LI Weizhi,YUAN Kai,JIANG Yadong.Analysis of Low Frequency SiN Film on the Effect of Stress Level and Deposition Parameters[J].Journal of Electron Devices,2010,33(2):139-141. |
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| Authors: | HAN Xiaolin LI Weizhi YUAN Kai JIANG Yadong |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices;School of Optoelectronic Information;University ofElectronic Science and Technology of China;Chengdu 610054;China |
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| Abstract: | SiN thin films are deposited by plasma enhanced chemical vapor deposition(PECVD) under various power and pressure conditions.The connection of these two parameters with the related SiN film characteristics i.e.making relations of the film deposition rate with the stress and the thickness uniformity of this film,are discussed.Results show that the change of power affects ion bombardment on the substrate,and that of pressure lead to the change of the mean free path of the molecular.Ion bombardment and molecul... |
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| Keywords: | LFPECVD silicon nitride stress film growth |
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