黄绿光发光二极管光衰性能研究

AlGaInP是GaAs基LED有源区主要材料,广泛应用于黄绿光至红光波段的LED。但在短波段尤其是黄绿光波段(565~575nm),因其材料组成较接近间接带隙,其发光效率和稳定性存在问题。目前黄绿光功率衰减以俄歇复合损耗、非复合辐射中心损耗、载流子损耗为主。所以研究相同生长温度不同阱垒厚度、量子阱相同厚度不同生长温度、P型掺杂层掺杂浓度对发光光衰的影响。发现较薄的MQW阱垒厚度、较高的MQW生长温度及P-space后端P型层前端插入一层20nm厚度,1.7×10^18cm^-3浓度的高掺杂层三种方案可以改善黄绿光发光二极管光衰性能。

Study on the Degradation of Yellow-green Light-emitting Devices

AlGaInP was the main material of GaAs-based LED active region and was widely used for LED in yellow-green light to red light. However, in the short wavelength band, especially in the yellow-green band(565~575 nm), its luminous efficiency and stability had some problems because of its material composition close to the indirect bandgap. At present, the yellow-green optical decay was dominated by Auger composite loss, non-composite radiation center loss, and carrier loss. Therefore, the effects of different well/barrier thicknesses at the same growth temperature, different growth temperatures of multiple quantum wells, and the doping concentration of P-type doping layers on luminescence decay were studied. It is found that three ways of thinner MQW barrier thickness, higher MQW growth temperature and inserting a layer of 20 nm thickness, 1.7×10^18 cm^-3 concentration of highly doped layer between P-space layer and P-type layer can improve yellow-green light-emitting diode light decay performance.