| 镀覆工艺对功率外壳金锡/金硅焊接的可靠性研究 |
| |
| 引用本文： | 谢新根,程凯,李鑫,孙林. 镀覆工艺对功率外壳金锡/金硅焊接的可靠性研究[J]. 固体电子学研究与进展, 2019, 39(2): 144-149 |
| |
| 作者姓名： | 谢新根 程凯 李鑫 孙林 |
| |
| 作者单位： | 南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016 |
| |
| 摘 要： | 通过功率外壳金硅(AuSi)焊接失效案例,研究了铜-钼铜-铜(CPC)、铜-钼-铜(CMC)为热沉材料的功率外壳镀覆工艺,包括在CPC(或CMC)材料无氧铜表面高温重新形成晶格,采用外延生长型NiCo/Au替代Ni/Au镀层。镀覆工艺优化后,功率外壳金锡(AuSn)或AuSi芯片焊接可靠性得到了显著改善。
|
| 关 键 词： | 功率外壳 金锡 金硅 晶格 外延生长 镍钴 |
Study on the Reliability of Plating Process to the Power Packages AuSn/AuSi Welding |
| |
| XIE Xingen,CHENG Kai,LI Xin,SUN Lin. Study on the Reliability of Plating Process to the Power Packages AuSn/AuSi Welding[J]. Research & Progress of Solid State Electronics, 2019, 39(2): 144-149 |
| |
| Authors: | XIE Xingen CHENG Kai LI Xin SUN Lin |
| |
| Affiliation: | (Nanjing Electronic Devices Institute ,Nanjing,210016,CHN) |
| |
| Abstract: | Through the failure case of AuSi welding of power package,the plating processes of power package with Cu-MoCu-Cu(CPC),Cu-Mo-Cu(CMC)as heat sink material were studied,including recrystallization of crystal lattice on the surface of oxygen free copper of CPC(or CMC)at high temperature,replacement of the Ni/Au coating with the epitaxial growth type NiCo/Au.After the plating process is optimized,the reliability of the power package AuSn or AuSi chip solder has been significantly improved. |
| |
| Keywords: | power package AuSn AuSi crystal lattice epitaxial growth NiCo |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
