图案化In2O3:Sn薄膜制备及显影剂对图案制备的影响研究

功能薄膜的图案化是微电子加工中不可或缺的工序,目前已经成为制约我国微型化集成电路发展的关键因素。本研究以制备低成本且高质量的图案化In₂O₃:Sn薄膜为目的,摒弃常规且工艺复杂的干法刻蚀或湿法刻蚀的研究思路,转而向一种化学修饰的溶胶凝胶技术探索。利用化学修饰后的纳米级溶质颗粒的紫外感光特性,以及曝光前后溶质颗粒在有机溶剂中发生的溶解度变化,通过溶胶凝胶工艺成膜,后经曝光、显影、热处理等工序,形成图案化的In₂O₃:Sn薄膜。重点探索了显影剂配方对薄膜图案制备的影响规律。该方法去除了包含光刻胶制备、剥离以及刻蚀等一系列复杂工序,薄膜图案化制备简单且质量较高,是一种新的值得继续探究并广泛推广的薄膜图案化技术。

Preparation of patterned In2O3:Sn films and the effect of developer on the patterns

The patterning of functional films is an indispensable process in microelectronics processing,and has become a key factor restricting the development of miniaturized integrated circuits in our country.The purpose of this work is to prepare patterned In₂O₃:Sn thin films using a chemically modified sol-gel technique which is low-cost and high-quality,instead of the conventional(but complicated)methods,like dry etching or wet etching.Due to the ultraviolet sensitivity of the chemically modified particles,and the solubility changes of the particles in the organic solvent before and after exposure,the patterned films can be fabricated by photosensitive sol-gel process,that is dip-coating,exposure,development,heat treatment and other steps.The influence of developer on the patterned films has been investigated.This method is simple because a series of complex processes have been removed,including photoresist preparation,stripping and etching.The patterned films have a high quality.This technique is new and worthy of further exploration and wide spread promotion.