| In3+离子在多孔SiO2干凝胶中的发光 |
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| 引用本文： | 王英姿,杨中喜,王建荣,杨萍. In3+离子在多孔SiO2干凝胶中的发光[J]. 硅酸盐通报, 2003, 22(1): 74-76,91 |
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| 作者姓名： | 王英姿 杨中喜 王建荣 杨萍 |
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| 作者单位： | 1. 济南大学材料科学与工程学院,济南,250022
2. 山东大学晶体材料研究所,济南,250100 |
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| 摘 要： | 采用常规的Sol-gel工艺合成了In^3 掺杂的多孔SiO2干凝胶，In^3 离子作为间隙离子存在于SiO2网络中，展示了一种新颖的发光现象，改变了多孔SiO2干凝胶的发射光谱。这种掺杂的多孔SiO2干凝胶的激发和发射光谱均由2个带组成，短波长的发光峰在440nm(λex=380nm），其相对荧光强度约是未掺杂的多孔SiO2干凝胶的4倍；长波长的发光峰（In^3 离子在多孔SiO2干凝胶的特征发射）在600nm(λex=476nm），其相对荧光强度约是In^3 掺杂ZnS纳米晶的10倍。由此可以看出：掺杂的多孔SiO2干凝胶是一种高效的发光材料。
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| 关 键 词： | In^3＋离子 多孔SiO2干凝胶 sol－gel 掺杂 光致发光 二氧化硅 |
Photoluminescence Characteristics of In3+-doped SiO2 Xerogel |
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| Abstract: | A novel porous silica xerogel doped with In 3+was synthesized by sol-gel processing.Its fluorescence properties were evaluated and compared with that of the un-doped silica xerogel.A novel luminescent phenomenon was observed from the doped silica xerogel.The photoluminescence(PL)of all the doped samples show high fluorescence intensities.The PL spectrum of the composite consists of two emission peaks,one at 440 nm and the other at 600 nm,In 3+ions in the doped silica xerogel show sharp emission band. This high efficient luminescence from the samples was assigned to the structure defects in the silica xerogel networks and the luminescent centers of In 3+in the porous fluorescence silica xerogel. |
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| Keywords: | sol-gel silica xerogel In 3+-doped photoluminescence) |
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