Performance dependence of InGaP/InGaAs/GaAs pHEMTs on gatemetallization |
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| Authors: | Fay P Stevens K Elliot J Pan N |
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| Affiliation: | Dept. of Electr. Eng., Notre Dame Univ., IN; |
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| Abstract: | The performance of InGaP-based pHEMTs as a function of gate metallization is examined for Mo/Au, Ti/Au, and Pt/Au gates. DC and microwave performance of pHEMT's with 0.7-μm gate lengths is evaluated. Transconductance, threshold voltage, ft, and fmax are found to depend strongly on gate metallization. High-speed performance is achieved, with ft of 41.3 GHz and f max of 101 GHz using Mo/Au gates. The difference in performance between devices with different gate metallizations is postulated to be due to a combination of the difference in Schottky barrier heights and different gate-to-channel spacings due to penetration of the gate metal into the InGaP barrier layer |
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