Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth?0.5 kA/cm2 at 300 K) |
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| Authors: | Drakin AE Eliseev PG Sverdlov BN Dolginov LM Shevchenko EG |
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| Affiliation: | Academy of Sciences of the USSR, P.N. Lebedev Physical Institute, Moscow, USSR; |
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| Abstract: | Double heterostructure InGaAsP/InP lasers with a three-layer waveguide (or `separate-confinement? DH) have been prepared by the LPE method with a thin active layer. A decrease in threshold current density has been observed up to 512 A/cm2 in a four-sided cleaved diode at room temperature. CW operation of broad-area diodes is obtained in the pumping current range up to 2.5 A. Calculations of threshold current density for these laser structures are presented. |
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