A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment |
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| Authors: | G M Voronkova V D Popov G A Protopopov |
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| Affiliation: | (1) Moscow Engineering Physical Institute (State University), Moscow, 115409, Russia |
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| Abstract: | The results of processing the experimental drain-gate characteristics of test MOS transistors after irradiation with fast electrons and subsequent heat treatment are reported. It is shown that the concentration of trapping centers in the oxide is lowered as a result of radiation-thermal treatment. |
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| Keywords: | 61 80 Fe 65 40 Gr 73 40 Qv 81 40 Wx 85 30 Tv |
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