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Intersubband lifetimes in Si/SiGe quantum wells |
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| Authors: | W. Heiss, E. Gornik, C. R. Pidgeon, S. -C. Lee, I. Galbraith, B. Murdin, C. J. G. M. Langerak, M. Helm, H. Hertle,F. Sch ffler |
| Affiliation: | a Institut für Festkörperelektronik, TU Wien, A-1040, Wien, Austria b Department of Physics, Heriot Watt University, Edinburgh EH14 4AS, U.K. c FOM-Instituut voor Plasmafysica, Rijnhuizen, 3439 MN, Nieuwegein, The Netherlands d Institut für Halbleiterphysik, Universität Linz, Linz, Austria e Walter Schottky Institut, TU München, D-8046, Garching, Germany f Daimler-Benz AG, Forschungsinstitut Ulm, D-7900, Ulm, Germany |
| Abstract: | In the present work we report the first measurement of intersubband lifetimes in Si/Si1−xGex quantum well samples. We have determined T1 by a time resolved pump and probe experiment using the far infrared picosecond free electron laser source FELIX at Rijnhuizen, the Netherlands. In a sample with a well width of 50 Å and a sheet density of 2.1 × 1012 cm−2 we find a lifetime of 30 ps while 20 ps is observed for a density of 1.1 × 1012 cm−2 and a well width of 75 Å. We discuss acoustic phonon, as well as optical phonon intersubband scattering as possible limiting processes for the observed lifetimes in Si/SiGe and GaAs/AlGaAs quantum wells. |
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