| (Zn,Nb)掺杂SnO2压敏材料的电子特性 |
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| 引用本文： | 王勇军,陈洪存,王矜奉,董火民,张沛霖,钟维烈.(Zn,Nb)掺杂SnO2压敏材料的电子特性[J].压电与声光,2000,22(4):259-261. |
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| 作者姓名： | 王勇军 陈洪存 王矜奉 董火民 张沛霖 钟维烈 |
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| 作者单位： | 山东大学,物理系,济南,250100 |
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| 基金项目： | 山东省自然科学基金资助项目 |
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| 摘 要： | 依据缺陷势垒模型选取Ｚｎ＾２＋和Ｎｂ＾５＋复合掺杂的ＳｎＯ２陶瓷进行研究，测量了材料的密度、失重率等物理性质和非线性系数、电流－电压（Ｉ－Ｖ）关系曲线等电子性质，利用低电流区电流密度与电场（ｌｏｇＪ－Ｅ）的线性关系定性地讨论了势垒高度与非线性之间的关系。
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| 关 键 词： | 压敏材料 缺陷势垒模型 二氧化锡 掺杂 |
Electrical Properties of (Zn,Nb)-doped S nO2 Varistor System |
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| WANG Yong-jun,CHEN Hong-cun,WANG Jin-feng,DONG Huo-min,ZHANG Pei-lin,ZHONG Wei-lie.Electrical Properties of (Zn,Nb)-doped S nO2 Varistor System[J].Piezoelectrics & Acoustooptics,2000,22(4):259-261. |
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| Authors: | WANG Yong-jun CHEN Hong-cun WANG Jin-feng DONG Huo-min ZHANG Pei-lin ZHONG Wei-lie |
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| Abstract: | The physical properties such as density and weight loss and electrical properties such as nonlinear coefficient and I-V characteriatic of (Zn,Nb)-doped SnO2 varistors were investigated in this paper. In addition,the relationship between log J and E1/2 in the low current density region was analyzed and the barrier heights of samples were qualitatively discussed. There exists an agreement between results of physical and electrical properties. |
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| Keywords: | varistor material defect barrier model nonlinear cofficient barrier voltage |
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