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微波场中烧结BaTiO3系半导体陶瓷的研究
引用本文:张道礼,曹明贺,周东祥. 微波场中烧结BaTiO3系半导体陶瓷的研究[J]. 压电与声光, 2000, 22(2): 107-110
作者姓名:张道礼  曹明贺  周东祥
作者单位:华中理工大学,电子科学与技术系,武汉,430074
基金项目:教育部“高等学校骨干教师资助计划”资助项目
摘    要:采用TE3103单模腔微波炉烧结BaTiO3系半导体陶瓷,对微波与陶瓷材料相互作用机制进行了探讨,分析了BaTiO3陶瓷微波结过程中各损耗随温度的变化规律;同时,分别在体系中引入受主杂质Cr^3+和施主杂质Nb^5+,研究微波场中杂质浓度对钛酸钡陶瓷晶粒生长的影响。

关 键 词:微波场 半导体陶瓷 微波烧结 钛酸钡

Sintering of BaTiO3-based Semiconductin g Ceramics in Microwave Field
ZHANG Dao-li,CAO Ming-he,ZHOU Dong-xiang. Sintering of BaTiO3-based Semiconductin g Ceramics in Microwave Field[J]. Piezoelectrics & Acoustooptics, 2000, 22(2): 107-110
Authors:ZHANG Dao-li  CAO Ming-he  ZHOU Dong-xiang
Abstract:BaTiO_3-based semiconducting ceramics were sintered in TE103 single-mode cavity microwave furnace. The mechanism of microwave acting on ceramic materials was studied. Meanwhile,Nb5 as donor impurity and Cr3 as acceptor impurity were doped in BaTiO3 ceramics,respectively. The results indicated that the impurities had an obvious effect on grain growth of BaTiO3 ceramics in microwave field. Based on defect chemistry,a reasonable explanation was given on the phenomenon.
Keywords:microwave field  BaTiO_3-based semiconducting ceramics  microwave sintering  grain growth
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