| 硅基PZT铁电薄膜的界面和表面研究 |
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| 引用本文： | 张林涛,任天令,刘理天,李志坚,张琪,朱静.硅基PZT铁电薄膜的界面和表面研究[J].压电与声光,2000,22(5):316-318. |
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| 作者姓名： | 张林涛 任天令 刘理天 李志坚 张琪 朱静 |
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| 作者单位： | 1. 清华大学,微电子所,北京,100084
2. 清华大学,材料科学与工程研究院,北京,100084 |
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| 基金项目： | 国家自然科学基金资助项目! (6 980 6 0 0 7) |
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| 摘 要： | 用高分辨岸民镜等手段研究了溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）工艺制备的硅基Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３（ＰＺＴ）铁电薄膜，发现在ＰＺＴ的上表面生成了ＳｉＯ２，ＰＺＴ与硅衬底的界面处形成了无定型的ＳｉＯｘ层并有铅的沉积，而且热处理温度越高，这种现象越显著。这些结构严重影响了ＰＺＴ铁电薄膜的品质及其应用。在分析上述结构产生机制的基础上提出了Ｓｏｌ－Ｇｅｌ工艺的改进方法。
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| 关 键 词： | 高分辨透射电镜 溶胶－凝胶 PZT 铁电薄膜 硅基 |
Interface and Surface Studies of Silicon-based PZT Thin Films |
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| ZHANG Lin-tao,REN Tian-ling,LIU Li-tian,LI Zhi-jian,ZHANG Qi,ZHU Jing.Interface and Surface Studies of Silicon-based PZT Thin Films[J].Piezoelectrics & Acoustooptics,2000,22(5):316-318. |
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| Authors: | ZHANG Lin-tao REN Tian-ling LIU Li-tian LI Zhi-jian ZHANG Qi ZHU Jing |
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| Abstract: | Structures of the silicon-based Pb(Zr, Ti)O 3(PZT) thi n films were investigated by high resolu tion transmission electron microscopy (H RTEM) and other methods. A silicon dioxi de layer was found at the PZT surface. A n amorphous silicon oxide layer and lead deposition appeared at the PZT/Si inter face. These structures. which heavily af fected the properties and the applicatio ns of the PZT thin films, became more se rious as the annealing temperature incre ased. the idea to improve the Sol-Gel me thod was proposed based on the formation -mechanism analysis of the micro structu res. |
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| Keywords: | high resolution transmission electron microscopy(HRTEM) Sol-Gel PZT ferroelectric thin film |
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