| Abstract: | In this article, the electrically active centres (EAC) in a noncrystalline ultrathin oxide layer and at its interfaces with a monocrystalline silicon substrate and a polycrystalline silicon gate were investigated. These centres are (1) the fixed oxide charge centres in the ultrathin oxide layer and (2) the traps at its interfaces and in the polysilicon gate layer. In order to study these centres and to estimate their space and energy distributions, the modified C–V technique was applied. Among the results obtained, the significant role of the outer interface (polysilicon–ultrathin oxide) in the formation of electrical characterisitics and its sensitivity to the technological operations which possibly has an effect on the degree of its hydrogenation ought to be emphasised. |
