碲镉汞高温红外探测器组件进展

高工作温度红外探测器组件是第三代红外探测器技术的重要发展方向，可用于高工作温度红外探测器的基础材料主要有锑基和碲镉汞两大类。介绍了昆明物理研究所在高工作温度红外焦平面探测器组件方面的最新研究进展，其中基于碲镉汞材料p-on-n技术研制的高工作温度中波640×512探测器组件在150 K温区性能优异，探测器的噪声等效温差(NETD)小于20 mK，配置了高效动磁式线性制冷机的高温探测器组件(IDDCA结构)，质量小于270 g，探测器组件光轴方向长度小于70 mm(F4)，室温环境下组件稳态功耗小于2.5 Wdc，降温时间小于80 s，声学噪声小于27 dB，探测器光轴方向自身振动力最大约1.1 N。目前正在进行环境适应性和可靠性验证，完成后就可实现商用量产。

Advance in high operating temperature HgCdTe infrared detector

High operating temperature (HOT) infrared detector technology is an important branch of the third-generation infrared detector technology. The basic materials that can be used for high operating temperature infrared detectors are mainly Sb based and HgCdTe based. This paper introduces the lasest research progress of high operating temperature infrared focal plane module in Kunming Institute of Physics (KIP). The high operating temperature MCT based detectors developed based on p-on-n technology have reached good performance in the temperature range of 150 K with the NETD less than 20 mK. The weight of MCT 640×512 IDDCA module adapted with high efficiency moving magnet split linear cooler is less than 270 g with the detector length in optical axis direction less than 70 mm (F4). At ambient temperature, the steady power consumption of the module is less than 2.5 Wdc while the cool down time is less than 80 s, audible noise is less than 27 dB and self induced vibration force is less than 1.1 N. MCT HOT modules are now under environmental adaptability and reliability verification and commercial mass production of this detector will be realized after the verification test.