碳化硅陶瓷导热性能的研究进展EI

SiC陶瓷具有优异的力学性能、热学性能、抗热震性能、抗化学侵蚀性能和抗氧化性能,是热交换器设备的常用基体材料。由于原料、成型工艺、烧成工艺和烧结助剂等因素制约,SiC陶瓷含有较多气孔、晶界、杂质和缺陷,导致其常温热导率(≤270 W·m^(-1)·K^(-1))低于碳化硅单晶材料(6H-SiC,490 W·m^(-1)·K^(-1)),且不同制备工艺下热导率存在较大差异。本文主要分析了温度、气孔、晶体结构和第二相对SiC陶瓷导热性能的影响,归纳了热压烧结法、放电等离子烧结法、无压烧结法、重结晶烧结法和反应烧结法制备高导热SiC陶瓷的特点,对优化烧结助剂种类及含量、高温热处理和添加高导热第二相等改善SiC陶瓷导热性能的主要措施进行阐述,并展望了未来高导热SiC陶瓷的研究方向,为未来制备低成本、高导热SiC质热交换器提供理论参考。

Research progress in thermal conductivity of SiC ceramics

SiC ceramics has been extensively used in heat exchangers because of their excellent mechanical properties, high thermal conductivity, and superior thermal shock, corrosion, and oxidation resistance. However, there is a wide variation in the thermal conductivity of SiC ceramics, depending on the raw materials, molding process, sintering process, and sintering additives. The thermal conductivity of SiC ceramics (≤ 270 W·m^-1·K^-1) is much lower than that of 6H-SiC single crystals (490 W·m^-1·K^-1) because of pores, grain boundaries, impurities, and defects in SiC ceramics. In this work, the important factors affecting the thermal conductivity of SiC ceramics were analyzed, including temperature, pore, crystal structure, and second phase. Further, the preparation processes of high conductivity SiC ceramics were systematically compared based on hot-pressed sintering, spark plasma sintering, pressureless sintering, recrystallization sintering, and reaction sintering. The improvement measures of thermal conductivity of SiC ceramics were summarized, including the optimization of the type and content of sintering aids, high-temperature annealing, and adding a high-thermal-conductivity second phase. Finally, the prospects and research directions of low-cost and high-thermal-conductivity SiC ceramics are proposed.