A new lateral MOS-gated thyristor with controlling base-current |
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| Authors: | Sugawara F Aoki K Yamaguchi H Sasaki K Sasaki T Fujisaki H |
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| Affiliation: | Dept. of Electr. Eng., Tohoku Gakuin Univ., Miyagi ; |
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| Abstract: | A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P+ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor |
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