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Pt/TiO2二极管湿敏传感器
引用本文:孙德明 肖梦秋. Pt/TiO2二极管湿敏传感器[J]. 半导体技术, 1998, 23(5): 29-32,42
作者姓名:孙德明 肖梦秋
作者单位:复旦大学材料科学系
摘    要:Pt常被用来在金属氧化物半导体上做肖特基接触,在常温下,Pt/TiO2界面处的电子电导对Pt/TiO2肖特基势垒高度的变化非常敏感,本文描述了利用该性质制造的湿敏传感器的性能,并讨论了因水在Pt/TiO2界面处的化学吸附,引起表面Fermi能级改变,影响Pt/TiO2肖特基势垒的高度,从而导致了I-V曲线变化的物理过程,对器件制造过程中的工艺问题所论述。

关 键 词:湿敏传感器 肖特基势垒 半导体湿敏器件

Humidity Sensor of Pt/TiO 2 Diode
Sun Deming,Xiao Mengqiu,Wang Rongchang,Rong Ruifen. Humidity Sensor of Pt/TiO 2 Diode[J]. Semiconductor Technology, 1998, 23(5): 29-32,42
Authors:Sun Deming  Xiao Mengqiu  Wang Rongchang  Rong Ruifen
Abstract:Platinum is often used as a Schottky contact material on metal oxide semiconductor.At room temperature,the electronic conductivity across the Pt/TiO 2 interface leads to be extremely sensitive to the height of Schottky barrier.The performance of humidity sensors fabricated by using this sensitivity is described in this paper.The mechanism is that the change of the height of Schottky barrier of Pt and TiO 2 induced by the chemisorption of water,causing the surface state Fermi level to change leads to the drift of I V characteristic curve.The properties of such a Pt/TiO 2 humidity sensor are described while the fabrication related problems are also discussed.
Keywords:Humidity sensor Schottky barrier Pt/TiO 2 contact
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