硅纳米线阵列太阳电池的性能分析

采用金属催化腐蚀法分别在(100)和(111)硅片表面制备出大面积垂直排列和倾斜排列的单晶硅纳米线阵列,垂直阵列在300～1000nm波段的平均反射率约为2.5%,倾斜阵列在该波段的平均反射率约为5%。基于垂直阵列和倾斜阵列制作的硅纳米线阵列太阳电池的最高转换效率分别为9.31%和11.37%。倾斜阵列电池的串联电阻比垂直阵列电池有所减小,使电池填充因子增大,性能有所提升。载流子复合是硅纳米线阵列太阳电池中电学损失的主导,使电池性能明显低于常规单晶硅电池。

ANALYSIS OF THE PERFORMANCE OF SILICON NANOWIRE ARRAY SOLAR CELLS

Large-area vertically-aligned and slantingly-aligned mono-crystalline silicon nanowire (SiNW) arrays have been fabricated on (100) and (111) mono-crystalline silicon wafers respectively by catalytic etching method. The average re-flectance of vertically-aligned SiNW (VA-SiNW) arrays is about 2.5% over the range of 300 to 1000nm, while that of slantingly-aligned SiNW (SA-SiNW) arrays is about 5.0%. VA-SiNW array solar cells and SA-SiNW array solar ceils exhibit a highest power conversion efficiency of 9.31% and 11.37 % respectively. Lower series resistance of SA-SiNW army solar ceils than that of VA-SiNW array solar cells benefits a higher fill factor and thus improves the cell perfor-mance. Electrical loss from high surface recombination in SiNW arrays is dominant in our SiNW army cells and therefore suppresses the cell performance.