Analysis of kink-related backgating effect in GaAs MESFET |
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| Authors: | Horio K. Usami K. |
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| Affiliation: | Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya; |
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| Abstract: | Two-dimensional simulation of backgating effect in a GaAs MESFET is made in which impact ionization of carriers and deep donors “EL2” in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed |
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