| SiC陶瓷无压烧结工艺探讨 |
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| 引用本文： | 陈巍,曹连忠,张向军,韩肃,段关文.SiC陶瓷无压烧结工艺探讨[J].兵器材料科学与工程,2004,27(5):35-37. |
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| 作者姓名： | 陈巍 曹连忠 张向军 韩肃 段关文 |
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| 作者单位： | 中国兵器科学研究院,宁波分院,浙江,宁波,315103 |
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| 摘 要： | 系统研究了不同温度无压烧结条件下,添加质量分数为2％C及不同B元素量对SiC的致密机制、微观结构 及力学性能的影响。结果表明,添加质量分数为2.0％C+1.0％B的SiC经2 150℃×2h无压烧结后的力学性能为最 优,其抗弯强度达470MPa,断裂韧性达5.12MPa·m1/2。
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| 关 键 词： | 无压烧结 碳化硅 微观结构 力学性能 |
| 文章编号： | 1004-244X(2004)05-0035-03 |
| 修稿时间： | 2004年3月9日 |
Discussion on Pressureless sintering of SiC ceramic |
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| CHEN Wei,CAO Lian - zhong,ZHANG Xiang - jun,HAN Su,DUAN Guan - Wen.Discussion on Pressureless sintering of SiC ceramic[J].Ordnance Material Science and Engineering,2004,27(5):35-37. |
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| Authors: | CHEN Wei CAO Lian - zhong ZHANG Xiang - jun HAN Su DUAN Guan - Wen |
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| Abstract: | The influence of different additives such as B 、C on compactness mechanism, microstructure and properties of un-pressing SiC ceramic were investigated. The SiC ceramics were prepared with addition of 2. 0% C and 1. 0% B, sintering at 2 150℃ for 2h. The fracture toughness was 5. 12 MPa · m1/2, and bending strength 470MPa. |
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| Keywords: | pressureless sintering silicon carbide micro - structure mechanical properties |
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