Gunn effect in MESFET-like structures |
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| Authors: | Diskus C.G. Lubke K. Springer A.L. Lettenmayr H.W. Thim H.W. |
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| Affiliation: | Linz Univ., Austria; |
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| Abstract: | The performance of planar field-effect controlled transferred electron oscillators with different combinations of layer thickness and doping concentration has been investigated. A negative differential resistance has even been obtained with 0.29 mu m thick 1.6*10/sup 17/ cm/sup -3/ n-doped samples. This is the first time a MESFET-like active layer has exhibited the Gunn effect and has successfully been operated as a TEO at 36 GHz.<> |
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