Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model |
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| Authors: | P M Igic P A Mawby M S Towers W Jamal S Batcup |
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| Affiliation: | Department of Electrical and Electronic Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK |
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| Abstract: | New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation (V×I) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages. |
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