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Recrystallisation of CVD poly-Si on insulator by dual electron-beam processing |
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| Authors: | Davis JR McMahon RA Ahmed H |
| Affiliation: | Cambridge University, Engineering Department, Cambridge, UK; |
| Abstract: | Large areas of ?100? oriented single-crystal films have been produced, using the lateral seeding technique, from polycrystalline silicon deposited on SiO2. One electron beam was used to provide generalised substrate heating, and another swept a localised molten zone in the deposited silicon. |
| Keywords: | |