| In1-xGaxAsyP1-y/GaAs组分x和y间约束关系及应用 |
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| 引用本文： | 王建峰,牛南辉,盖红星,李冰,韩军,徐遵图,沈光地. In1-xGaxAsyP1-y/GaAs组分x和y间约束关系及应用[J]. 半导体技术, 2004, 29(10): 46-49 |
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| 作者姓名： | 王建峰 牛南辉 盖红星 李冰 韩军 徐遵图 沈光地 |
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| 作者单位： | 北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022 |
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| 摘 要： | 计算出与GaAs衬底相匹配的In1-xGaxAsyP1-y组分x和y的约束关系,并加以验证;用约束关系简化带隙与组分x和y函数关系,使之变为单变量y的函数,并给出晶格常数、带隙与组分关系的三维图,并长出材料加以证实.
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| 关 键 词： | 约束关系 晶格常数 带隙 |
| 文章编号： | 1003-353X(2004)10-0046-04 |
| 修稿时间： | 2004-01-16 |
Constrained Relationship of the x and y for In1-xGaxAsyP1-y/GaAs and Application |
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| WANG Jian-feng,NIU Nan-hui,GAI Hong-xing,LI bing,HAN Jun,XU Zun-tu,SHEN Guang-di. Constrained Relationship of the x and y for In1-xGaxAsyP1-y/GaAs and Application[J]. Semiconductor Technology, 2004, 29(10): 46-49 |
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| Authors: | WANG Jian-feng NIU Nan-hui GAI Hong-xing LI bing HAN Jun XU Zun-tu SHEN Guang-di |
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| Abstract: | The constrained relationship of the x and y was calculated for In Ga As P which 1-x xy 1-y matched to GaAs substrate, and the results was verified. The relationship between the band-gap is simplified with the fraction of x and y, the single variable function was obtained. After that the 3D relationship of the lattice, band-gap and the fraction were presented. The method was verified with material experiments. |
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| Keywords: | constrained relationship lattice constant band-gap |
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