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IGBT器件的发展现状以及在智能电网中的应用
引用本文:金锐,于坤山,张朋,刘先正,何维国,刘隽. IGBT器件的发展现状以及在智能电网中的应用[J]. 智能电网, 2013, 1(2): 11-16
作者姓名:金锐  于坤山  张朋  刘先正  何维国  刘隽
作者单位:国网智能电网研究院电工新材料及微电子研究所;国网智能电网研究院电工新材料及微电子研究所;国网智能电网研究院电工新材料及微电子研究所;国网智能电网研究院电工新材料及微电子研究所;上海市电力公司;上海市电力公司
摘    要:以绝缘栅双极型晶体管(insulated-gate bipolar transistor,IGBT)为代表的可关断半导体功率器件的成熟应用,推动了电力电子技术的又一次革新。首先介绍IGBT在智能电网中应用的重要性,对20多年来IGBT器件在芯片和封装等技术在国内外的发展水平进行回顾。重点分析IGBT的选型特点和在电网中的典型应用,最后分析在这些应用中使用IGBT器件所带来的深远影响。

关 键 词:绝缘栅双极型晶体管;功率半导体;电力电子

Development of IGBT Devices and the Typical Application in the Smart Grid
JIN Rui,YU Kunshan,ZHANG Peng,LIU Xianzheng,HE Weiguo and LIU Jun. Development of IGBT Devices and the Typical Application in the Smart Grid[J]. Smart Grid, 2013, 1(2): 11-16
Authors:JIN Rui  YU Kunshan  ZHANG Peng  LIU Xianzheng  HE Weiguo  LIU Jun
Affiliation:Department of New Electrical Materials & Microelectronics, State Grid Smart Grid Research Institute;Department of New Electrical Materials & Microelectronics, State Grid Smart Grid Research Institute;Department of New Electrical Materials & Microelectronics, State Grid Smart Grid Research Institute;Department of New Electrical Materials & Microelectronics, State Grid Smart Grid Research Institute;Shanghai Municipal Electric Power Company;Shanghai Municipal Electric Power Company
Abstract:The application of insulated-gate bipolar transistor (IGBT), as the representative of the turn-off semiconductor power devices, promotes the innovation of the power electronic technology once again. This paper first introduces the importance of the application of IGBT in the smart grid, and then reviews the development level of the chip and package technology in IGBT devices at home and abroad for the recent twenty years. It focuses on the analysis of the selection criteria of IGBT and typical applications in power grid, and finally analyzes the profound influence of IGBT devices brought in these application fields.
Keywords:insulated-gate bipolar transistor (IGBT)   power semiconductor   power electronics
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