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The Effect of Pressure on the Dissociation of H2/CH4 Gas Mixture during Diamond Films Growth via Chemical Vapor Deposition
引用本文:赵庆勋,辛红丽,韩佳宁,文钦若,杨景发.The Effect of Pressure on the Dissociation of H2/CH4 Gas Mixture during Diamond Films Growth via Chemical Vapor Deposition[J].等离子体科学和技术,2002,4(1):1113-1118.
作者姓名:赵庆勋  辛红丽  韩佳宁  文钦若  杨景发
作者单位:CollageofPhysicsScienceandTechnology,Hebeiuniversity,Baoding071002,China
基金项目:This work was supported by Doctor Foundation of Hebei Education Committee,Hebei Natural Science Foundation(599091 ) of China
摘    要:Monte Carlo simulations are adopted to study the electron motion in mixture of H2 and CH4 duruing diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD),The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation.The average energy distribution of electrons and the space distribution of effective species such as CH3,CH3^ ,CH^ and H at various gas pressures are given in this paper,and optimum experimental conditions are inferred from these results.

关 键 词:金刚石薄膜  化学气相淀积  H2/CH4气体解离  压强效应

The Effect of Pressure on the Dissociation of H2/CH4 Gas Mixture during Diamond Films Growth via Chemical Vapor Deposition
Abstract:Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH3+, CH+ and H at various gas pressures are given in this paper,and optimum experimental conditions are inferred from these results,
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