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The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors |
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| Authors: | Tianbing Chen Zhiyun Luo John D. Cressler Tamara F. Isaacs-Smith John R. Williams Gilyong Chung Steve D. Clark |
| Affiliation: | a Department of Electrical and Computer Engineering, Alabama Microelectronics Science and Technology Center, 200 Broun Hall, Auburn University, Auburn, AL 36849, USA b Department of Physics, Auburn University, Auburn, AL 36849, USA c Sterling Semiconductor, Tampa, FL 33619, USA d NAVSEA Crane, Crane, IN 47522, USA |
| Abstract: | The radiation response of SiO2 gate oxides grown on 4H-SiC to NO passivation is presented for the first time. The effects of gamma radiation on Qeff are similar for n-4H-SiC MOS capacitors both with and without NO passivation, but are different in sign (negative) compared to SiO2 on Si. The variation in Dit with total dose, however, is different for the passivated versus the unpassivated samples. Comparisons between Si SOI and 4H-SiC suggest that properly passivated SiC MOSFETs should have good radiation tolerance. |
| Keywords: | Silicon carbide MOS Radiation Passivation |
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