| 微波半导体器件的计算机模拟 |
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| 引用本文： | 孙建平. 微波半导体器件的计算机模拟[J]. 固体电子学研究与进展, 1983, 0(4) |
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| 作者姓名： | 孙建平 |
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| 摘 要： | 本文介绍半导体器件计算机模拟的物理模型和计算方法.以分析微波崩越二极管的大信号时间域模拟说明进行微波半导体计算机模拟的原理和过程,并给出对工作频率为40千兆赫的双漂移砷化镓崩越二极管进行计算机模拟的计算结果.
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Computer Simulation for Microwave Semiconductor Devices |
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| Abstract: | A physical model and related computational method for computer simulation of semiconductor devices is introduced in this paper. Analysis of a large-signal time-domain simulation for a microwave IMPATT diode, is presented to show the principles and procedures of computer simulation for microwave semiconductor devices. The computed results for a 40GHz GaAs double-drift-region IMPATT diode are presented. |
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