集成电路互连线电迁移建模综述

简要介绍了集成电路互连线建模发展的历史。回顾了曾广泛使用的一维电迁移引起的回流模型。基于原子通量散度的概念,电迁移建模可以分为两种方法。一种是常用的扩散路径法,该方法能够解释传统的铝片上金属互连的许多重要电迁移现象。然而,随着芯片尺寸越来越小,工业界为了追求更好的性能,转向了使用铜/低k组合作为互连材料,同时引进了三维集成电路技术。顺应这种趋势,第二种驱动力电迁移建模方法发展了起来,该方法有助于人们理解窄互连工艺中的许多现象。有限元模拟也越来越多地用于驱动力分析法。

Review of Electromigration Modeling of IC Interconnects

The history of electromigration (EM) modeling of IC interconnects is briefly reviewed. The widely used one-dimension (1-D) EM-induced back flow model is introduced. Based on the conception of atomic flux divergence (AFD), the EM modeling can also be mainly grouped into two approaches. One is the conventional diffusion path approach, which has explained many important phenomena in traditional Al on-chip metallization. However, the microelectronic industry has turned to Cu/low-k interconnects in need of better performances of the shrinking chip, and three-dimensional (3-D) integrated circuit technology is also introduced. In this trend, the driving force approach is developed, which can help to understand many phenomena in narrow interconnection. The finite element modeling (FEM) is used more and more in the driving force formalism.