Deposition of the chemically sensitive polymer layer on SGFET gate by laser-induced chemical-vapour polymerization |
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Authors: | Vítzslav rka |
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Affiliation: | J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, 182 23 Prague, Czech Republic |
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Abstract: | The method of laser-induced chemical-vapour polymerization (LID) has been tested to deposit a sensing polymer layer of polypyridine on the gate of a suspended-gate field-effecet transistor (SGFET) gas sensor. Measurements using exposures to organic vapours demonstrate that the SGFET gate located in the narrow (1000 Å) space on the chip can be chemically modified by this alternative method. Compared with currently used electrochemical deposition, the LID method provides very adhesive films with different physicochemical properties, which gives a wider choice of chemically sensing polymer layers available for chemical modification of SGFET sensors. |
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Keywords: | Laser-induced chemical-vapour polymerization (LID) Suspended-gate field-effect transistors |
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