High-voltage lateral RESURF MOSFETs on 4H-SiC |
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Authors: | Chatty K Banerjee S Chow TP Gutmann RJ |
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Affiliation: | Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY; |
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Abstract: | High-voltage lateral RESURF MOSFETs have been fabricated on 4H-SiC with both nitrogen and phosphorus as source/drain and RESURF region implants. Blocking voltages as high as 1200 V and specific on-resistances of 4 Ω cm2 have been obtained, with the high on-resistance attributed to poor inversion layer mobility. Phosphorus is most appropriate for the source/drain implants due to low sheet resistance and contact resistance with low temperature anneals. However, poor activation of low dose phosphorus implants at 1200°C makes nitrogen the preferred choice for the RESURF region |
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