| Ga掺杂ZnO透明电极的研究 |
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| 引用本文： | 刘祯,王晓峰,杨华,段垚,曾一平.Ga掺杂ZnO透明电极的研究[J].半导体学报,2010,31(9):094002-4. |
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| 作者姓名： | 刘祯 王晓峰 杨华 段垚 曾一平 |
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| 作者单位： | Materials Science Center;Institute of Semiconductors;Chinese Academy of Sciences; |
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| 摘 要： | An 8 μ m thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2.24± 0.21 eV) resulting from the formation of Ga2O3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage.
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| 关 键 词： | LED 氮化镓 氧化锌 镓掺杂 透明层 TCL集团 X射线光电子能谱 发光二极管 |
A Ga-doped ZnO transparent conduct layer for GaN-based LEDs |
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| Liu Zhen,Wang Xiaofeng,Yang Hu,Duan Yao and Zeng Yiping.A Ga-doped ZnO transparent conduct layer for GaN-based LEDs[J].Chinese Journal of Semiconductors,2010,31(9):094002-4. |
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| Authors: | Liu Zhen Wang Xiaofeng Yang Hu Duan Yao and Zeng Yiping |
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| Affiliation: | Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | |
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| Keywords: | Ga-doped ZnO film light-emitting diode electroluminescence spectra X-ray photoelectron spectroscopy |
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