Transport phenomena in n-MnxHg1?x
Te/Cd0.96Zn0.04Te epitaxial films |
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Authors: | G V Beketov A E Belyaev S A Vitusevich S V Kavertsev S M Komirenko |
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Affiliation: | (1) Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, 252650 Kiev, Ukraine |
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Abstract: | The results of an experimental study of samples of MnxHg1−x
Te films grown by liquid-phase epitaxy on a Cd0.96Zn0.04Te substrate are presented. It shows that, as a result of the diffusion of cadmium from the substrate, a CdxMnyHg1−x−y
Te film with a variable band-gap layer is formed close to the 〈epitaxial-film〉-substrate interface. The appearance of this
variable band gap is revealed by the transport phenomena. The temperature dependence of the band gap E
g
(T) is determined in a linear approximation on T from the results of a theoretical analysis of the temperature dependences of the free-carrier concentration and mobility.
It is shown that averaging the semiempirical dependences for the ternary compounds with the extreme compositions, using the
virtual-crystal approximation, can produce large errors when determining E
g
(T) in a specific semiconductor.
Fiz. Tekh. Poluprovodn. 31, 268–272 (March 1997) |
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Keywords: | |
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