Increased drain saturation current in ultra-thinsilicon-on-insulator (SOI) MOS transistors |
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Authors: | Sturm JC Tokunaga K Colinge J-P |
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Affiliation: | Dept. of Electr. Eng., Princeton Univ., NJ; |
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Abstract: | Based on substrate-charge considerations, an increased drain saturation current for MOS transistors in ultrathin silicon-on-insulator (SOI) films is predicted, compared to similar transistors in bulk or thick SOI films. For typical parameters of 200-A gate oxide with a channel doping of 4×1016 cm-3, the drain saturation current in ultrathin SOI transistors is predicted to be ~40% larger than that of bulk structures. An increase of ~30% is seen in measurements made on devices in 1000-A SOI films |
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