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Te‐Doped Black Phosphorus Field‐Effect Transistors
Authors:Bingchao Yang  Bensong Wan  Qionghua Zhou  Yue Wang  Wentao Hu  Weiming Lv  Qian Chen  Zhongming Zeng  Fusheng Wen  Jianyong Xiang  Shijun Yuan  Jinlan Wang  Baoshun Zhang  Wenhong Wang  Junying Zhang  Bo Xu  Zhisheng Zhao  Yongjun Tian  Zhongyuan Liu
Affiliation:1. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, P. R. China;2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano‐tech and Nano‐bionics, Chinese Academy of Sciences, Suzhou, China;3. Department of Physics, Beihang University, Beijing, China;4. Department of Physics, Southeast University, Nanjing, China;5. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
Abstract:
Keywords:2D layered materials  black phosphorus  field‐effect transistors  Te‐doping
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