一种新的基于E-SIMOX衬底的PSOI高压器件

首次提出了一种新的采用E-SIMOX技术的界面电荷岛结构的PSOI高压器件(NI PSOI)。该结构在SOI器件介质层上界面注入形成一系列等距的高浓度N+区。器件外加高压时,纵向电场所形成的反型电荷将被未耗尽N+区内高浓度的电离施主束缚在介质层上界面,同时在下界面积累感应电子。详细研究NI PSOI工作机理及相关结构参数对BV的影响,在0.375μm介质层、2μm顶层硅上仿真获得188 V高耐压,较常规结构提高54.1%,其中附加场EI和ES分别达到190 V/μm和13.7 V/μm。

A Novel PSOI High Voltage Device Based on E-SIMOX Substrate

A novel NI(N+ charge islands) high voltage device structure based on E-SIMOX(Epitaxy-the Separation by IMplantation of Oxygen) substrate is proposed in this paper.NI PSOI is characterized by a series of equidistant high concentration N+-regions on the top and interfaces of dielectric buried layer.Interface inversion holes resulting from vertical electric field are located in the spacing of two neighboring N+-regions,and at the same time,induced electrons are formed on the bottom interface.The enhanced field ΔEI and reduced field ΔES by the accumulated interface charges reach to 190 V/μm and 13.7 V/μm,respectively,with which 188 V BV of NI PSOI is obtained by 2D simulation on a 0.375 μm-thick dielectric layer and 2 μm-thick top silicon layer,increasing by 54.1%,in comparison with conventional SOI.