| 标准温度和衬底分步清洗对GaN初始生长影响RHEED研究 |
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| 引用本文： | 郎佳红, 顾彪, 徐茵, 秦福文, 曲钢. 标准温度和衬底分步清洗对GaN初始生长影响RHEED研究[J]. 红外技术, 2003, 25(6): 64-68. DOI: 10.3969/j.issn.1001-8891.2003.06.018 |
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| 作者姓名： | 郎佳红 顾彪 徐茵 秦福文 曲钢 |
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| 作者单位： | 大连理工大学,三束材料表面改性国家重点实验室,辽宁,大连,116024;大连理工大学,电气工程与应用电子技术系,辽宁,大连,116024 |
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| 基金项目： | 国家自然科学基金资助项目 (No .699760 0 8) |
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| 摘 要： | 在经过校温的ECR-PEMOCVD装置上,通过分析RHEED(反射高能电子衍射)图像研究了常规清洗和ECR等离子体所产生的活性氢氮等离子体源对蓝宝石衬底进行清洗、氮化实验,结果表明:经常规清洗的蓝宝石衬底的表面晶质差异很大;按照经验清洗30 min是不能清洗充分的,那么根据情况进行多步清洗就显得很重要了;结果表明清洗得很充分的衬底经20 min的氮化出来,而未清洗充分的衬底20 min或更长的时间是不能氮化出来的.
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| 关 键 词： | 蓝宝石 清洗 氮化 RHEED GaN |
| 文章编号： | 1001-8891(2003)06-0064-05 |
| 修稿时间： | 2003-07-14 |
Study of ECR-Plasma Cleaning of Sapphire Substrate Using RHEED |
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| Study of ECR-Plasma Cleaning of Sapphire Substrate Using RHEED[J]. Infrared Technology , 2003, 25(6): 64-68. DOI: 10.3969/j.issn.1001-8891.2003.06.018 |
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| Authors: | LANG Jia-hong GU Biao XU Yin QIN Fu-wen QU Gang |
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| Affiliation: | LANG Jia-hong 1,2,GU Biao 1,2,XU Yin 1,2,QIN Fu-wen 1,2,QU Gang 1,2 |
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| Abstract: | The normal cleaning effect and the cleaning and n it ridation effect of hydrogen and nitrogen ECR plasma for sapphire substrates were researched by analyzing RHEED image in ECR-PEMOCVD system whose temperature ha d been calibrated. The results indicated that much difference lies for surface q uality of sapphire substrate by normal cleaning; The 30-minute cleaning for som e substrates is insufficient and the multi-step cleaning is needed; Sufficientl y cleaned sapphire substrates have been nitrided for 20 minutes by ECR hydrogen and nitrogen plasma and smooth and clear nitridation layer can be obtained, whil e insufficiently cleaned ones cannot be nitrided for 20 minutes or longer time. |
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| Keywords: | sapphire cleaning nitridation RHEED GaN |
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