High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain |
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| Authors: | Maeda T. Ikeda K. Nakaharai S. Tezuka T. Sugiyama N. Moriyama Y. Takagi S. |
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| Affiliation: | Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan; |
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| Abstract: | We demonstrate, for the first time, successful operation of Schottky-barrier source/drain (S/D) germanium-on-insulator (GOI) MOSFETs, where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. Excellent performance of p-type MOSFETs using Pt germanide S/D is presented in the accumulation mode. The hole mobility enhancement of 50%/spl sim/40% against the universal hole mobility of Si MOSFETs is obtained for the accumulated GOI channel with the SiO/sub 2/-Ge interface. |
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