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| 气氛氧压对脉冲激光法制备的CeO2/Si薄膜的结晶取向的影响 | |
| 引用本文： | 李美亚,王忠烈,范守善,赵清太,熊光成,林揆训. 气氛氧压对脉冲激光法制备的CeO2/Si薄膜的结晶取向的影响[J]. 功能材料, 2000, 31(2): 159-161 |
| 作者姓名： | 李美亚 王忠烈 范守善 赵清太 熊光成 林揆训 |
| 作者单位： | 1. 汕头大学科学院材料所,广东 汕头,515063;北京大学物理系 2. 微电子研究所,北京,100871 3. 清华大学物理系,北京,100084 4. 北京大学物理系 5. 汕头大学科学院材料所,广东 汕头,515063 |
| 基金项目： | 中国科学院资助项目，19574003， |
| 摘 要： | 用脉冲激光镀膜法，在不同的温度和氧压条件下，在Ｓｉ（１００）片上制备了一系列的ＣｅＯ２膜。Ｘ射线衍射分析表明，在较低的氧压下生长的ＣｅＯ２膜为（１１１）取向，在较高的氧压了生长的膜则为（１００）取向。研究表明，ＣｅＯ２膜的取向对氧压显示了独特的依赖性，氧压对控制膜的结晶取向具有十分重要的作用。讨论了氧压对ＣｅＯ２薄膜结晶取向影响的可能机理。 |
| 关 键 词： | CeO2薄膜 结晶取向 脉冲激光沉积 气氛氧压 |
| 文章编号： | 1001—9731(2000)02－0159－03 |
| 修稿时间： | 1998－12－21 |
Influences of Ambient Oxygen Pressures on the Crystalline Orientation of CeO2/Si Thin Films Prepared by Pulsed Laser Deposition |
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| LI Meiya,WANG Zhonglie,FAN Shoushan,ZHAO Qingtai,XIONG Guangcheng,LIN Kuixun. Influences of Ambient Oxygen Pressures on the Crystalline Orientation of CeO2/Si Thin Films Prepared by Pulsed Laser Deposition[J]. Journal of Functional Materials, 2000, 31(2): 159-161 | |
| Authors: | LI Meiya WANG Zhonglie FAN Shoushan ZHAO Qingtai XIONG Guangcheng LIN Kuixun |
| Affiliation: | LI Meiya (Science Center, Shantou University,Shantou,51563, China)WANG Zhonglie (Institute, of Microelectronics, Peking University, Beijing, 100871, China)FAN Shoushan (DePartment of Physics, Tsinghua UniversitY, Beijing, 100084. China)ZHAO Qingtai (Institute, of Microelectronics, Peking University, Beijing, 100871, China)XIONG Guangcheng ( DePartment of Physics)LIN Kuixun (Institute, of Microelectronics, Peking University, Beijing, 100871, China) |
| Abstract: | A series of CeO 2 thin films were deposited on Si(100) substrates at a series of deposition temperatures and oxygen pressures by pulsed laser deposition.X-ray diffraction of these films revealed that the crystalline orientations of the CeO 2 films grown at low oxygen pressures were (111) orientation,while that grown at a relative high oxygen pressures possessed (100) orientation.Oxygen pressure was found to be important to control the crystalline orientation of CeO 2 thin films,and these films showed an unique oxygen pressure dependence of the orientation.A possible mechanism of the dependence of the orientation of CeO 2 films on the oxygen pressure was proposed to explain these results. |
| Keywords: | CeO 2 thin film crystalline orientation pulsed laser deposition ambient oxygen pressure |
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