固相反应和离子注入制备硅化镍薄膜

采用固相反应和镍离子注入硅方法分别制备了硅化镍薄膜，利用卢瑟福背散射谱（RBS) , X射线衍射（XRD）和喇曼光谱对它们的成分和结构进行了表征. 结果表明固相反应方法中，硅化镍薄膜的相结构取决于不同的热退火条件，纯相的NiSi2薄膜需要在高温（1123K）下两步热退火才能获得. 而利用离子注入方法，则可以在较低温度（523K）下直接得到单相的NiSi2薄膜. 在30～400K范围内测量了它们的电阻率和霍尔迁移率随温度的变化关系，结果表明固相反应制备的NiSi和NiSi2薄膜都表现出典型的金属性电导行为，而离子注入制备的NiSi2薄膜则表现出完全不同的电学性质.

Growth of Nickel Silicide Thin Films by Solid Phase Reactionand Ion Beam Synthesis

Nickel silicide thin films were prepared by solid phase reaction (SPR) and ion beam synthesis (IBS).The samples were characterized by using Rutherford backscattering spectrometry (RBS),X-ray diffraction (XRD),micro-Raman spectroscopy,electrical resistivity and Hall effect measurements.The structures of nickel silicide films prepared by solid phase reaction depended on the post-annealing conditions,and the nickel disilicide (NiSi2) phase was formed after a two-step annealing at 1123K,while the NiSi2 layers were obtained directly by ion beam synthesis at low temperature (523K).The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400K showed typical metallic behavior for nickel silicides prepared by SPR and peculiar peak and valley features for the NiSi2 layers synthesized by IBS.