| 退火对Ni/3C-SiC欧姆接触的影响 |
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| 引用本文： | 蒲红斌,陈治明,封先锋,李留臣. 退火对Ni/3C-SiC欧姆接触的影响[J]. 固体电子学研究与进展, 2005, 25(1): 52-55 |
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| 作者姓名： | 蒲红斌 陈治明 封先锋 李留臣 |
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| 作者单位： | 西安理工大学电子工程系,西安,710048;西安理工大学电子工程系,西安,710048;西安理工大学电子工程系,西安,710048;西安理工大学电子工程系,西安,710048 |
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| 基金项目： | 科技重点实验室基金试点项目(51432050101 SX0101) |
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| 摘 要： | 采用溅射法在液相外延 3 C-Si C上制备 Ni电极 ,并利用圆形传输线法研究了退火温度对欧姆接触特性的影响 ,实验表明对于 Ni/n-Si C金半接触 ,经过 80 0～ 1 0 0 0°C高温退火 5分钟后 ,肖特基整流特性退化为欧姆接触 ,表现出良好的欧姆接触特性 ,且随退火温度的提高 ,接触电阻进一步下降 ,1 0 0 0°C退火后 ,可获得最低的接触电阻为 5 .0× 1 0 - 5Ω· cm2。
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| 关 键 词： | 圆形传输线法 欧姆接触 接触电阻率 |
| 文章编号： | 1000-3819(2005)01-052-04 |
| 修稿时间： | 2004-04-21 |
Effect of Annealing on Ni Ohmic Contact of 3C-SiC |
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| PU Hongbin,CHEN Zhiming,FENG Xianfeng,LI Liuchen. Effect of Annealing on Ni Ohmic Contact of 3C-SiC[J]. Research & Progress of Solid State Electronics, 2005, 25(1): 52-55 |
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| Authors: | PU Hongbin CHEN Zhiming FENG Xianfeng LI Liuchen |
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| Abstract: | The effect of annealing on Ni ohmic contact of 3C-SiC was studied in this work. 3C-SiC crystal was grown on Si by the liquid phase epitaxy (LPE). Nickel was deposited on 3C-SiC films with RF s puttering and their specific contact resistances were measured using the circula r transmission line method(CTLM). I-V characteristics measurements were per form ed to determine the behavior of these contacts after annealing at different temp eratures. It is shown that annealing is effective means to improve ohmic contact s at 800～1 000 °C for 5 minutes. This resulted in the electrical degradati on of the contact from Schottky to ohmic contact, and further reduction of conta ct resistance especially at still higher temperature. In out experiments, the sm allest contact resistance of 5.0×10 -5 Ω·cm2 was achieved at 1 000 °C. |
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| Keywords: | circular transmission line model ohmic contact contact resistance |
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