Geometric effects on the gate-controlled capacitor

The effect of p-n junction geometry on the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of a gate-controlled Capacitor (GCC) is discussed. Three p-n junction geometries were studied; one was a circular structure and the remaining two were cross structures. It is concluded that the effective transit distances are decreased as the geometries of the junction become more complex.