| 一种抗单粒子翻转的SOI器件结构 |
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| 引用本文： | 贺威,张正选. 一种抗单粒子翻转的SOI器件结构[J]. 半导体学报, 2006, 27(13): 291-294 |
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| 作者姓名： | 贺威 张正选 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所，上海 200050;中国科学院研究生院，北京 100049;中国科学院上海微系统与信息技术研究所，上海 200050 |
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| 摘 要： | 介绍了SOI器件的可偏压隔离阱结构，对这种结构抗单粒子翻转的可能性进行了分析，对采用此结构的反相器的抗单粒子翻转性能利用器件模拟软件Medici和电路模拟软件Hspice进行了模拟. 最后对基于可偏压隔离阱的抗单粒子翻转器件的应用给予了讨论.
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| 关 键 词： | 单利子翻转；SOI CMOS |
SOI Device Design for SEU Hardening |
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| He Wei and Zhang Zhengxuan. SOI Device Design for SEU Hardening[J]. Chinese Journal of Semiconductors, 2006, 27(13): 291-294 |
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| Authors: | He Wei and Zhang Zhengxuan |
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| Affiliation: | Shanghai Institute of Microsystem and Infrormation Technology,Chinese Academy of Sciences,Shanghai 200050,China;Graduate University of the Chinese Academy of Sciences,Beijing 100049,China;Shanghai Institute of Microsystem and Infrormation Technology,Chinese Academy of Sciences,Shanghai 200050,China |
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| Abstract: | A CMOS device design technique based on SOI process,using actively biased isolated wells for single event upset hardening,has been described.Medici and Hspice simulations were performed to simulate inverter constructed by actively biased isolated wells.This paper also discusses the application of this technique. |
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| Keywords: | SEU SOI CMOS |
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